Faculty of Electrical Engineering

GC-0003

Nanostructured Hybrid Semiconductor Materials and Devices

1.10.2024 - 30.9.2027

Silicon is the most widespread semiconductor in nowadays applications. However, new semiconductor materials, device architectures and applications are rapidly emerging with the advent of nanostructured and hybrid materials, making them the focus of this project. Thus, with this project we address current hot research topics beyond classical silicon, such as hybrid and low-dimensional semiconductors (perovskites, quantum dots - QD, two-dimensional materials - 2DM), photonic integrated circuits, and terahertz and fiber-based sensors. These novel applications exploit nanoscale material properties, which require advanced device design as well as designated material fabrication, characterization and optimization. Intertwined research of semiconductor devices based on novel materials and approaches within this project will bring improvement in device properties and more important, lead to new application possibilities.

The project is organized in two levels, combining the expertise of the participating research organization. The DEVICE level will cover device aspects from design, modelling and simulations to fabrication and characterization. The MATERIALS level will support the Device level development through innovative hybrid materials development, promoting new materials solutions and fundamental knowledge on their properties.