Lectures by prof. dr. Marko Topič

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Content

Two- and Four-pole networks. Linearisation.

Properties of Semiconductors.

PN junction and diodes. Energy band diagrams and concentration profiles. Current-voltage characteristic. Small-Signal Analysis. Large-Signal Analysis. Breakdown and Zener diode.

Bipolar transistors - PNP and NPN. Energy band diagrams and concentration profiles. Current-voltage characteristics. Small-Signal Analysis. Large-Signal Analysis.

Field-effect transistors - Junction FET and MOS FET. Current-voltage characteristics. Small-Signal Analysis. Large-Signal Analysis.

Switching devices: PNPN diode, diac, thyristor, triac, IGBT.

Optoelectronic devices: photoresistor, photodiode and solar cell, light emitting diodes and diode lasers, optocouplers.

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Literature

  • Pierret, Robert F., Semiconductor Device Fundamentals, Pearson Education Limited (ISBN: 0131784595) 1996.
  • Neamen, Donald A., Semiconductor Device Fundamentals, McGraw-Hill Education (ISBN: 0071116273) 2005.
  • Smole F. in M. Topič: Elementi polprevodniške elektronike, Založba FE in FRI, (ISBN: 961-243-020-9) 2005.
  • Kasap, S. O., Optoelectronics and Photonics; Principles and Practices , Addison-Wesley, 2000.
  • Miller, John, Lester; Friedman (urednika), Photonics Rules of Thumb - Optics, Electro Optics, Fiber Optics and Lasers (5th Revised edition), SPIE Press, 2003 (ISBN: 0071385193).
  • Quimby, R. S., Photonics and Lasers - An Introduction, John Wiley and Sons Ltd, 2006 (ISBN: 0471719749).
  • Al-Azzawi, Abdul, Photonics: Principles and Practices, Taylor & Francis Ltd , 2006 (ISBN: 0849382904).
  • Electronic component, Wikipedia
  • Sheet with equations
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Laboratory Practice

Schedule of laboratory practice - school year 2016/2017

Foreign students should contact assistant for group arrangement.

0. Introduction
1. Static I(U) curve of semiconductor diode
2. Differential conductance of a semiconductor diode
3. Switching times and junction capacitance of a pn diode
4. Breakdown diode as voltage stabiliser
5. Ebers-Moll model of a bipolar transistor
6. Incremental quadripole parameters of a bipolar transistor as small-signal amplifier
7. Limit frequencies of a bipolar transistor
8. Switching times of a bipolar transistor
9. MOS transistor
10. Light-emitting diode (LED)

Text for laboratory exercises can be found in virtual classroom e.FE.

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Exam Terms

Terms and registration

Written terms are published in STUDIS. A student needs to register for an exam in STUDIS at least four days before the exam. The exam dates in 2017 are: 30.1., 7.2., 23.6., 1.9. Oral exams are arranged with the professor.

  • Condition for written exam: Completed all laboratory exercises
  • Condition for oral exam: Passed written exam (at least 50 points out of 100)

Permitted aids at the exam

  • Official A4 sheet with equations (see above),
  • Dedicated calculator (mobile phones and tablets are not allowed).
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Rešitve izpitov

Rešitve izpita bodo dostopne v e-učilnici.

Ocene bodo dostopne v STUDIS-u. Ogled izpitov bo v kabinetu Glažar - BN312.